SD8250中文资料意法半导体数据手册PDF规格书
SD8250规格书详情
DESCRIPTION
The SD8250 is a high power Class C transistor specifically designed for TACAN/DME pulsed output and driver applications.
This device is designed for operation under moderate pulse width and duty cycle pulse conditions and is capable of withstanding 5:1 output VSWR at rated RF overdrive.
Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.
The SD8250 is supplied in the AMPAC Hermetic Metal/Ceramic package with internal Input/Output matching structures.
■ REFRACTORY/GOLD METALLIZATION
■ EMITTER SITE BALLASTED
■ 5:1 VSWR CAPABILITY @ 1.75 dB RF OVERDRIVE
■ LOW THERMAL RESISTANCE
■ INPUT/OUTPUT MATCHING
■ OVERLAY GEOMETRY
■ METAL/CERAMIC HERMETIC PACKAGE
■ POUT = 250 W MIN. WITH 8.0 dB GAIN
产品属性
- 型号：
SD8250
- 制造商：
ASI
- 制造商全称：
ASI
- 功能描述：
NPN SILICON RF POWER TRANSISTOR
