N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs

DESCRIPTION

The SD57060-01 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57060-01 is designed for high gain and broadband performance operating in common source mode at 28V. It is ideal for base station applications requiring high linearity.

■ EXCELLENT THERMAL STABILITY

■ COMMON SOURCE CONFIGURATION

■ POUT = 60 W with 11.5 dB gain @ 945 MHz

■ BeO FREE PACKAGE

SD57060-01属于分立半导体产品 > 晶体管 - FET，MOSFET - 射频。意法半导体（ST）集团制造生产的SD57060-01晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。