SSM4501GSD

NANDP-CHANNELENHANCEMENTMODEPOWERMOSFET

DESCRIPTION TheadvancedpowerMOSFETsfromSiliconStandardCorp.providethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. SimpleDriveRequirement LowOn-resistance FastSwitchingCharacteristic

STS4501

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SOT-23Package.

STS4501

P-Channel30V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter

TDA4501

SMALLSIGNALCOMBINATIONICFORCOLOURTV

PHI

TDS4501P

TransientDivertingSuppressor1-Line,45V(24VAC)EOSProtection

Description TransientDivertingSuppressors(TDS)aredesigned toprovideprotectionfromElectricalOverstress(EOS) events.Theyhavesuperiorclampingandtemperature characteristicswhencomparedtostandardTVSdevices. ThedeviceusesasurgeratedFETasthemainprotection element.A

TDS4501P.C

TransientDivertingSuppressor1-Line,45V(24VAC)EOSProtection

Description TransientDivertingSuppressors(TDS)aredesigned toprovideprotectionfromElectricalOverstress(EOS) events.Theyhavesuperiorclampingandtemperature characteristicswhencomparedtostandardTVSdevices. ThedeviceusesasurgeratedFETasthemainprotection element.A

TGA4501-EPU

28-31GHzKaBandHPA

KeyFeatures •0.25umpHEMTTechnology •18dBNominalGain •34.5dBmNominalP1dB •40dBmOTOITypical •Bias6V@2.1A PrimaryApplications •SatelliteGroundTerminal •Point-to-PointRadio

TGA4501-SCC

24-31GHzKaBandHPA

ProductDescription TheTriQuintTGA4501-SCCisacompact3WattHighPowerAmplifierMMICforKa-bandapplications.ThepartisdesignedusingTriQuint’sprovenstandard0.25umgatePowerpHEMTproductionprocess. KeyFeatures •0.25umpHEMTTechnology •23dBNominalGain •34.5dBmNo

THN4501E

SiGeNPNTransistor

□FEATURES oLowNoiseFigure NF=1.5dBatf=2GHz,VCE=3V,IC=5mA NF=1.7dBatf=2GHz,VCE=1V,IC=3mA oHighGain MAG=12.5dBatf=2GHz,VCE=3V,IC=30mA MAG=9.5dBatf=2GHz,VCE=1V,IC=7mA oHighTransitionFrequency fT=11GHzat

THN4501U

SiGeNPNTransistor

□FEATURES oLowNoiseFigure NF=1.5dBatf=2GHz,VCE=3V,IC=5mA NF=1.7dBatf=2GHz,VCE=1V,IC=3mA oHighGain MAG=12.5dBatf=2GHz,VCE=3V,IC=30mA MAG=9.5dBatf=2GHz,VCE=1V,IC=7mA oHighTransitionFrequency fT=11GHzat