FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 1.5 µs recovery time ■ High voltage ratings up to 1600V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

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IRF

DIODE GEN PURP 800V 150A DO205AC

Vishay

威世

Package：DO-205AC，DO-30，接线柱；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 800V 150A DO205AC

Vishay General Semiconductor - Diodes Division

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

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STMICROELECTRONICS

意法半导体

GaAs INTEGRATED CIRCUIT

FEATURES • Low Insertion Loss : LINS = 0.7 dB TYP. @VCONT = +3.0 V/0 V, f = 2 GHz • High Linearity Switching: Pin (1 dB) = +33.0 dBm TYP. @VCONT = +3.0 V/0 V, f = 2 GHz • Small 6-pin super minimold package (Size: 2.0 ´ 1.25 ´ 0.9 mm)

文件：218.07 Kbytes 页数：10 Pages

RENESAS

瑞萨

L-BAND SPDT SWITCH

DESCRIPTION The UPG153TB and UPG155TB are L-band SPDT (Single Pole Double Throw) GaAs FET switches for digital cellular or cordless telephone application. The devices can operate from 100 MHz to 2.5 GHz with low insertion loss. These devices are housed in an original 6 pin super mini-mold package

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NEC

瑞萨