SD103N

FAST RECOVERY DIODES Stud Version

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

SD103N25S20MBC

DISCRETE POWER DIODES and THYRISTORS

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

SD103N25S20MBV

DISCRETE POWER DIODES and THYRISTORS

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

SD103N25S20MC

DISCRETE POWER DIODES and THYRISTORS

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

SD103N25S20MSC

DISCRETE POWER DIODES and THYRISTORS

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

SD103N25S20MSV

DISCRETE POWER DIODES and THYRISTORS

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

SD103N25S20MV

DISCRETE POWER DIODES and THYRISTORS

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

SD103N25S20PBC

DISCRETE POWER DIODES and THYRISTORS

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

SD103N25S20PBV

DISCRETE POWER DIODES and THYRISTORS

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

SD103N25S20PC

DISCRETE POWER DIODES and THYRISTORS

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

SD103N25S20PSC

DISCRETE POWER DIODES and THYRISTORS

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

SD103N25S20PSV

DISCRETE POWER DIODES and THYRISTORS

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

SD103N25S20PV

DISCRETE POWER DIODES and THYRISTORS

Features ■HighpowerFASTrecoverydiodeseries ■1.0to2.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

SD103N700130

SD10 distribution box, top mounting M12-A, built-in control cable

SD103N700230

SD10 distribution box, top mounting M12-A, built-in control cable

SD103N706130

SD10 distribution box, top mounting M12-A, built-in control cable

SD103N706430

SD10 distribution box, top mounting M12-A, built-in control cable

SD103N10S10PV

包装：管件 封装/外壳：DO-205AC，DO-30，接线柱 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 1KV 110A DO205

Vishay General Semiconductor - Diodes Division

103

0.1/2.5GHzSiMMICBUFFERAMPLIFIERS

DESCRIPTION TheSTB7102,STB7103andSTB7104designedforMobilePhoneapplications(0.1/2.5GHz),areanhighisolationSiMMICBufferAmplifiers.ManufacturedinthethirdgenerationofSTproprietarybipolarprocess,theyoffersanexcellentisolationandagoodlinearityusingalowcurrentco

103

D챕tailscompletssurlesitedufabricant:

IDEAL#103(103) Descriptionduproduit Détailscompletssurlesitedufabricant: IDEALINDUSTRIES,INC