Small Signal Schottky Diodes

Features • Integrated protection ring against static discharge • Low capacitance • Low leakage current • Low forward voltage drop • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 defin

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VISHAYVishay Siliconix

威世威世科技公司

Small Signal Schottky Diodes

文件：108.68 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Package：DO-204AH，DO-35，轴向；包装：带盒（TB） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 50V DO35

Vishay General Semiconductor - Diodes Division

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60– 80– 100 VOLTS 80 WATTS . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —hFE= 2500 (Typ) @ IC= 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc

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MOTOROLA

摩托罗拉

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium−Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features •High DC Current Gain −hFE = 2500 (Typ) @ IC= 4.0 Adc •Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus)= 60 Vdc (Min) −

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ONSEMI

安森美半导体

WIDE BAND AMPLIFIER CHIPS

DESCRIPTION PPG100P and PPG101P are GaAs integrated circuits designed as wide band amplifiers. Both devices are available in chip form. PPG100P is low noise amplifier from 50 MHz to 3 GHz and PPG101P is a medium power amplifier in the same frequency band. These devices are most suitable for the

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NEC

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