SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features • Low Turn-on Voltage • Fast Switching • PN Junction Guard Ring for Transient and ESD Protection • Designed for Surface Mount Application • Plastic Material – UL Recognition Flammability Classification 94V-O

文件：46.73 Kbytes 页数：4 Pages

WTE

Won-Top Electronics

SCHOTTKY DIODES

FEATURES ◆ Low forward voltage drop ◆ Guard ring construction for transient protection ◆ Negligible reverse recovery time

文件：892.15 Kbytes 页数：2 Pages

SHUNYE

顺烨电子

SCHOTTKY DIODES

FEATURES ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection ● Negligible Reverse Recovery Time ● Low Capacitance ● Ultra-small Surface Mount Package

文件：287.89 Kbytes 页数：2 Pages

WINNERJOIN

永而佳

SCHOTTKY DIODES

FEATURES ◆ Low forward voltage drop ◆ Guard ring construction for transient protection ◆ Negligible reverse recovery time

文件：532.09 Kbytes 页数：2 Pages

CHENDA

辰达半导体

Schottky Barrier Diode

FEATURES ● Low Forward Voltage Drop ● Guard Ring Construction For Transient Protection. ● Negligible Reverse Recovery Time ● Low reverse capacitance ● Ultra-small surface mount package APPLICATIONS ● Schotty barrier switching.

文件：261.62 Kbytes 页数：3 Pages

DSK

Low Forward Voltage Drop

FEATURES ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection ● Negligible Reverse Recovery Time ● Low Capacitance ● Ultra-small Surface Mount Package

文件：783.14 Kbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：S1；Package：SOD-323；Surface Mount Schottky Barrier Diodes

Features • Low forward voltage • Low reverse capacitance

文件：240.76 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Low Forward Voltage Fast Switching Speed PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0

文件：95.54 Kbytes 页数：4 Pages

WTE

Won-Top Electronics

Small Signal Schottky Diodes

FEATURES • For general purpose applications • The SD101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guardring • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for

文件：85.04 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

SCHOTTKY BARRIER DIODE

FEATURES Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Very Low Reverse Capacitance

文件：810.73 Kbytes 页数：4 Pages

SY

顺烨电子