Package：TO-220-2；包装：剪切带（CT）带盒（TB） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 1200V 5A TO-220-2

Rohm Semiconductor

SiC Schottky Barrier Diode

Features 1) Low forward voltage 2) Negligible recovery time/current 3) Temperature independent switching behavior 4) Wide creepage distance = min. 5.10mm Applications ・Factory Automation ・PV Power Conditioner ・Wireless Charger ・EV Charger Station

文件：1.02088 Mbytes 页数：10 Pages

ROHM

罗姆

Automotive Grade SiC Schottky Barrier Diode

Features 1) AEC-Q101 qualified 2) Low forward voltage 3) Negligible recovery time/current 4) Temperature independent switching behavior 5) Wide creepage distance = min. 5.10mm Applications ・On Board Charger ・DC/DC Converter ・Wireless Charger ・EV Charger

文件：1.01611 Mbytes 页数：10 Pages

ROHM

罗姆

N-CHANNEL ENHANCEMEN-MODE D-MOS POWER FETs

[TOPAZ SEMICONDUCTOR] FEATURES ■ Low Capacitance - Ciss 11pF typ. ■ Inherently Temperature Stable by Design ■ TTL Logic Compatible Input - VGS(th) 2.0V (max) APPLICATIONS ■ Broadband RF Power Amplifiers ■ High Speed Switches and Drivers ■ Pulse Amplifiers and Logic Buff

文件：105.48 Kbytes 页数：3 Pages

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