首页 >SCRN224R-F>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR224,SiHFR224) •Straightlead(IRFU224,SiHFU224) •Availableintapeandreel •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9 | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
10-WPower-Over-EthernetIsolated | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
TRISILTM DESCRIPTION TheSMTPBxxserieshasbeendesignedtoprotecttelecommunicationequipmentagainstlightningandtransientinducedbyACpowerlines. FEATURES BIDIRECTIONALCROWBARPROTECTION. BREAKDOWNVOLTAGERANGE:From62VTo270V. HOLDINGCURRENT:IH=150mAmin REPETITIVEPE | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS |
产品属性
- 产品编号：
SCRN224R-F
- 制造商：
Cornell Dubilier Electronics (CDE)
- 类别：
电容器 > 薄膜电容器
- 系列：
SCR
- 包装：
散装
- 容差：
±10%
- 额定电压 - AC：
600Vpk
- 介电材料：
纸，金属化
- 工作温度：
-40°C ~ 80°C
- 安装类型：
机架安装，需要支架/托架
- 封装/外壳：
径向，Can
- 大小 / 尺寸：
2.910" 长 x 1.910" 宽（73.91mm x 48.51mm），唇状
- 高度 - 安装（最大值）：
4.310"（109.47mm）
- 端接：
螺纹，公头
- 引线间距：
1.380"（35.05mm）
- 应用：
换向，高频，开关式，高脉冲，DV/DT
- 描述：
CAP FILM 10UF 10% 600VPK RADIAL
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CORNELL |
20+ |
电容器 |
18 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Cornell |
22+ |
NA |
75 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
24+ |
N/A |
69000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
Cornell-Dubilier |
新 |
45 |
全新原装 货期两周 |
询价 | |||
Cornell-Dubilier |
2022+ |
41 |
全新原装 货期两周 |
询价 |
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