2A, 1200V SiC Schottky Barrier Diode

The SCP2120S is a SiC Schottky Barrier Diode. It is base on silicon carbide material, and its switching behavior is independent with temperature. The device has superfast recovery property and lower forward voltage drop, it can be used in switching power supply, solar inverter, PFC and UPS.

Sunnychip

晟芯半导体

N-channel SiC power MOSFET

Features 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive 6) Pb-free lead plating ; RoHS compliant Application ◾ Motor drives ◾ DC/DC converters ◾ Induction heating ◾ Switch mode power supplies ◾ Solar inverters

文件：448.74 Kbytes 页数：14 Pages

ROHM

罗姆

N-channel SiC power MOSFET

文件：836.21 Kbytes 页数：14 Pages

ROHM

罗姆

SiC N-Channel MOSFET

FEATURES ·Wide Bandgap SiC MOSFET Technology ·Low On-Resistance with High Blocking Voltage ·Low Capacitances with High-Speed Switchinge ·Easy to Parallel and Simple to Drive APPLICATIONS ·Battery Chargers ·Switch Mode Power Supplies ·DC-DC Converters ·Motor drives

文件：301.02 Kbytes 页数：3 Pages

ISC

无锡固电