TP2506NW

P-ChannelEnhancement-ModeVerticalDMOSFET

GeneralDescription Thislowthreshold,enhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-proven,silicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandthehighinputi

TZ2506A

HC49US40MHzCrystalUnit

Features: SurfaceMountSeamWeldPackage GoodFrequencyPerturbationandStabilityovertemperature DescriptionandApplications: HC49UScrystalunitforuseinwirelesstelecommunicationsdevices

VACR2506

AluminumHousedCompactWirewoundResistor

FEATURES •Powerratingupto500W •Highoverloadcapacity •ProtectionIP20orIP65 •Enhancedhumidityprotection •Completehousedconstruction •Multipleconstructionforhigherpowerrating •Heatsinkmounting •Materialcategorization:fordefinitionsofcompliance pleaseseewww.

VFR2506

25AmpPLASTICFASTRECOVERYSILICONAUTOMOTIVERECTIFIERSMechanicalDimensions

VS-GBPC2506A

SinglePhaseBridgeRectifier,25A,35A

FEATURES •Universal,3wayterminals:push-on,wrap aroundorsolder •Highthermalconductivitypackage,electrically insulatedcase •Positivepolaritysymbolmoldedontheplasticcase •Centerholefixing •Glasspassivateddiodechips •Excellentpower/volumeratio •Nickelplatedt

VS-GBPC2506W

SinglePhaseBridgeRectifier,25A,35A

FEATURES •Universal,3wayterminals:push-on,wrap aroundorsolder •Highthermalconductivitypackage,electrically insulatedcase •Positivepolaritysymbolmoldedontheplasticcase •Centerholefixing •Glasspassivateddiodechips •Excellentpower/volumeratio •Nickelplatedt

WT-2506

WashableType

XF2506HV-HPCMC

InductanceRange

XF2506HV-VPCMC

InductanceRange

XF2506K-HO

INDUCTORS