SIHL630S

PowerMOSFET

FEATURES •Surface-mount •Availableintapeandreel •Dynamicdv/dtrating •Repetitiveavalancherated •Logic-levelgatedrive •RDS(on)specifiedatVGS=4Vand5V •150°Coperatingtemperature •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc

SIHLI630G

PowerMOSFET

VDS(V)200 RDS(on)(Ω)VGS=5.0V0.40 Qg(Max.)(nC)40 Qgs(nC)5.5 Qgd(nC)24 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivenes

SIL630

SMTPowerInductor

Features ■RoHScompliant. ■Magneticallyshielded. ■Idealforpowersourcecircuits,DC-DCconverter,DC-ACinvertersinductorapplication. ■Inadditiontothestandardversionsshownhere,customizedinductorsareavailabletomeetyourexactrequirements.

SIL630

SMTPowerInductor

SL-630

High/lowliquidlevelmonitor

SLM-630

MOLDED,SELF-RETAININGLEDMOUNT

SMC630

highbrightgreencolorsmdledonceramics

SMF630

Capacity(20-hour)143Ah

SMK630

HIGHVOLTAGESWITCHINGAPPLICATIONS

DC-DCCONVERTERAPPLICATION HIGHVOLTAGESWITCHINGAPPLICATIONS Features HighVoltage:BVDSS=200V(Min.) LowCrss:Crss=24pF(Typ.) Lowgatecharge:Qg=12nC(Typ.) LowRDS(on):RDS(on)=0.4Ω(Max.)

SMK630

DC-DCCONVERTERAPPLICATION