SFT2010

HighEnergyNPNTransistor

200AMP100–140VoltHighEnergyNPNTransistor Features: •BVCBO=250VMIN •600WattsPowerDissipation •ExcellentSOACurve •Es/bof800mJ •Gainofover5at200A •HighReliabilityConstruction •PlanarChipConstructionwithLowLeakageandVeryFastSwitching •TX,TXV,S-Leve

SG2010

150mA,LowPower,LowDropout,LinearRegulators

GENERALDESCRIPTION TheSG2010low-power,low-dropout,CMOSlinearvoltageregulatoroperatesfrom2.5Vto5.5Vinputanddeliversupto150mA.Itistheperfectchoiceforlowvoltage,lowpowerapplications.Anultralowgroundcurrent(100µAat150mAoutput)makesthispartattractiveforbat

SID2010

3phiRoundInfraredLED

SID2010C

3phiRoundInfraredLED

SID2010C

3phiRoundInfraredLEDs

SMPA2010

200TO2000MHzTO-8CASCADABLEAMPLIFIER

200TO2000MHzTO-8CASCADABLEAMPLIFIER •HIGHOUTPUTPOWER:+25.5dBm(TYP.) •HIGHTHIRDORDERIP3:+33dBm(TYP.) •MODERATENOISEFIGURE:5.0dBm(TYP.) •LOWVSWR:1.5:1(TYP.)

SMPA2010

CascadableAmplifier200to2000MHz

Description ThePA2010poweramplifierisadiscretehybriddesign,whichusesthinfilmmanufacturingprocessesforaccurateperformanceandhighreliability. ThissinglestageGaAsFETfeedbackamplifierdesigndisplaysimpressiveperformancecharacteristicsoverabroadbandfrequencyrange.

SMPA2010

CascadableAmplifier200to2000MHz

SR2010

2AmpSchottkyBarrierRectifier80to100Volts

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •GuardRingProtection •LowPowerLossforHighEfficiency •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivi

SR2010

2Ampschottkybarrierrectifier80to100volts

Features •SchottkyBarrierRectifier •GuardRingProtection •LowForwardVoltage •ReverseEnergyTested •HighCurrentCapability •ExtremelyLowThermalResistance