SBRD81045T4G数据手册分立半导体产品的二极管-整流器-单规格书PDF

描述 Description

The Schottky Rectifier employs the Schottky Barrier principle in a metal-to-silicon power rectifier. It features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for low voltage, high frequency switching power supplies, free wheeling diodes and polarity protection diodes.

特性 Features

• Guarding for Stress Protection
• Low Forward Voltage
• Epoxy Meets UL94, VO at 1/8\"
• Short Heat Sink Tab Manufactured - Not Sheared!
• Similar in Size to the Industry Standard TO-220 PackageMechanical Characteristics:
• Case: Epoxy, Molded
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• 150°C Operating Junction Temperature
• AEC-Q101 Qualified and PPAP Capable
• SBRB and SBRD Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements

应用 Application

• Switching Power Supplies, Power Inverters

简介

SBRD81045T4G属于分立半导体产品的二极管-整流器-单。由制造生产的SBRD81045T4G二极管 - 整流器 - 单单整流器二极管系列产品可用于让电流仅沿一个方向流动，并且每个器件封装都恰好实现该功能的一个实例。其他用途的二极管（包括齐纳二极管和可变电容二极管）单独列在各自的产品系列中，每个器件封装中包含多个二极管的产品也是如此。