Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package

Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diod

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ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

文件：49.46 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package

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ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

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泰迪斯电子