TCU20A60

FRD-ForPowerFactorImprovementHighFrequencyRectification

TK20A60U

FieldEffectTransistorSiliconNChannelMOSType(DTMOS??

SwitchingRegulatorApplications •Lowdrain-sourceON-resistance:RDS(ON)=0.165Ω(typ.) •Highforwardtransferadmittance:⎪Yfs⎪=12S(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=600V) •Enhancement-mode:Vth=3.0to5.0V(VDS=10V,ID=1mA)

TK20A60U

iscN-ChannelMOSFETTransistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance:RDS(ON)=0.165Ω(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=600V) •Enhancementmode:Vth=3.0to5.0V(VDS=10V,ID=1mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrob

TK20A60U

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TK20A60W

MOSFETsSiliconN-ChannelMOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.13Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=1mA)

TK20A60W

iscN-ChannelMOSFETTransistor

XBF20A60S-G

2.0AFastRecoveryRectifier