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SBL6035PT

Low VF Schottky Barrier Rectifiers

FEATURES *Metalofsiliconrectifier,majoritycarrierconducton *Guardringfortransientprotection *Lowpowerloss,highefficiency *Highcurrentcapability,lowVF *Highsurgecapacity *Foruseinlowvoltage,highfrequencyinverters,freewhelling,andpolarityprotec

SIRECTIFIERSirectifier Semiconductors

矽莱克电子江苏矽莱克电子科技有限公司

6035

PLUGSANDJACKS

[KEYSTONE]

etc2List of Unclassifed Manufacturers

etc2未分类制造商

6035A

11A,350VN-CHANNELMOSFET

KIAGuangdong Keyia Semiconductor Technology Co., Ltd

可易亚半导体广东可易亚半导体科技有限公司

6035AL

N-ChannelLogicLevelPowerTrenchTMMOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithcomp

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

6035PC

3M??AdhesiveTransferTape6035PC

3MMinnesota Mining and Manufacturing

明尼苏达矿务明尼苏达矿务及制造业公司

AMLD-6035-RZ

LEDDriver

FEATURES: •StepDownDC/DCLEDDriver •ConstantCurrentOutput •UltraWide(7:1)InputRange •HighEfficiencyUpTo97 •OperatingTemperatureRange-40ºCto+85ºC •OpenAndShortLEDProtection •PWM/DigitalVoltage/AnalogueDimming •OutputPowerUpTo56Watts

AIMTEC

AIMTEC

AMLD-6035-RZ

Upto1000mA|LEDDriver

AIMTEC

AIMTEC

AMLD-6035Z

LEDDriver

FEATURES: •StepDownDC/DCLEDdriver •Constantcurrentoutput •UltraWide(8:1)inputvoltagerange •Highefficiencyupto97 •OperatingTemperaturerange-40ºCto+85ºC •OpenandShortLEDProtection •PWM/DigitalandAnalogVoltagedimming •BuiltwithMLCCCapacitorsonly

AIMTEC

AIMTEC

AMLD-6035Z

Upto1000mA|LEDDriver

AIMTEC

AIMTEC

AMLD-6035Z

Upto1000mA|LEDDriver

FEATURES: •StepDownDC/DCLEDdriver •Constantcurrentoutput •UltraWide(8:1)inputvoltagerange •Highefficiencyupto97 •OperatingTemperaturerange-40ºCto+85ºC •OpenandShortLEDProtection •PWM/DigitalandAnalogVoltagedimming •BuiltwithMLCCCapacitorsonly

AIMTEC

AIMTEC

AMLDW-6035-RZ

LEDDriver

AIMTEC

AIMTEC

APT6035

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Fast

ADPOW

Advanced Power Technology

APT6035

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT6035AVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Fast

ADPOW

Advanced Power Technology

APT6035BN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT6035BNR

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=18A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.35Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmode

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

APT6035BVFR

POWERMOSVFREDFET

POWERMOSV®FREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelay

ADPOW

Advanced Power Technology

APT6035BVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Fast

ADPOW

Advanced Power Technology

APT6035BVR

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

APT6035SVFR

POWERMOSVFREDFET

POWERMOSV®FREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelay

ADPOW

Advanced Power Technology

详细参数

  • 型号:

    SBL6035PT

  • 制造商:

    SIRECTIFIER

  • 制造商全称:

    Sirectifier Semiconductors

  • 功能描述:

    肖特基势垒二极管Schottky Barrier Diodes,低压降肖特基势垒二极管Low VF Schottky Barrier Diodes,Tj = -40°C ~ 125°C, Tjm = 125°C。

供应商型号品牌批号封装库存备注价格
SAGE millimeter
23+
模块
400
询价
SBL
23+
TO-3P
18000
询价
LT
2023+
T0247
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
LT
21+
T0247
35200
一级代理/放心采购
询价
原装LT
T0247
15620
一级代理 原装正品假一罚十价格优势长期供货
询价
LINEAR/凌特
23+
6000
原.现货
询价
04+
TO3P
85
询价
LT
2017+
TO-247
45288
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增
询价
DIODES美台
17+
TO-247
6200
询价
LTN
05+
原厂原装
19751
只做全新原装真实现货供应
询价
更多SBL6035PT供应商 更新时间2024-4-29 15:27:00