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SBCP68T1G

NPN Silicon Epitaxial Transistor

NPNSiliconEpitaxialTransistor ThisNPNSiliconEpitaxialTransistorisdesignedforuseinlowvoltage,highcurrentapplications.ThedeviceishousedintheSOT−223package,whichisdesignedformediumpowersurfacemountapplications. Features •HighCurrent •TheSOT−223PackageCanBe

ONSEMION Semiconductor

安森美半导体安森美半导体公司

SBCP68T1G

NPN Silicon Epitaxial Transistor

ONSEMION Semiconductor

安森美半导体安森美半导体公司

SBCP68T1G

包装:带盒(TB) 封装/外壳:TO-261-4,TO-261AA 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS NPN 20V 1A SOT223

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BCP68T1

MEDIUMPOWERNPNSILICONHIGHCURRENTTRANSISTORSURFACEMOUNT

NPNSiliconEpitaxialTransistor ThisNPNSiliconEpitaxialTransistorisdesignedforuseinlowvoltage,highcurrentapplications.ThedeviceishousedintheSOT-223package,whichisdesignedformediumpowersurfacemountapplications. •HighCurrent:IC=1.0Amp •TheSOT-223Packageca

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BCP68T1

MEDIUMPOWERNPNSILICONHIGHCURRENTTRANSISTORSURFACEMOUNT

NpnSiliconEpitaxialTransistor ThisNPNSiliconEpitaxialTransistorisdesignedforuseinlowvoltage,highcurrentapplications.ThedeviceishousedintheSOT-223package,whichisdesignedformediumpowersurfacemountapplications. •HighCurrent:IC=1.0Amp •TheSOT-223Packageca

MotorolaMotorola, Inc

摩托罗拉

BCP68T1G

NPNSiliconEpitaxialTransistor

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BCP68T1G

NPNSiliconEpitaxialTransistor

NPNSiliconEpitaxialTransistor ThisNPNSiliconEpitaxialTransistorisdesignedforuseinlowvoltage,highcurrentapplications.ThedeviceishousedintheSOT−223package,whichisdesignedformediumpowersurfacemountapplications. Features •HighCurrent •TheSOT−223PackageCanBe

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BCP68T1G

NPNSiliconEpitaxialTransistor

NPNSiliconEpitaxialTransistor ThisNPNSiliconEpitaxialTransistorisdesignedforuseinlowvoltage,highcurrentapplications.ThedeviceishousedintheSOT−223package,whichisdesignedformediumpowersurfacemountapplications. Features •HighCurrent •TheSOT−223PackageCanBe

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MV68T1AD

14DIP,5.0Volt,HCMOS/TTL,VCXO

MTRONPTI

Mtron Industries, Inc.

MV68T1AD

14DIP,5.0Volt,HCMOS/TTL,VCXO

MTRONPTI

Mtron Industries, Inc.

MV68T1AD-R

14DIP,5.0Volt,HCMOS/TTL,VCXO

MTRONPTI

Mtron Industries, Inc.

MV68T1AD-R

14DIP,5.0Volt,HCMOS/TTL,VCXO

MTRONPTI

Mtron Industries, Inc.

MV68T1AG

14DIP,5.0Volt,HCMOS/TTL,VCXO

MTRONPTI

Mtron Industries, Inc.

MV68T1AG

14DIP,5.0Volt,HCMOS/TTL,VCXO

MTRONPTI

Mtron Industries, Inc.

MV68T1AG-R

14DIP,5.0Volt,HCMOS/TTL,VCXO

MTRONPTI

Mtron Industries, Inc.

MV68T1AG-R

14DIP,5.0Volt,HCMOS/TTL,VCXO

MTRONPTI

Mtron Industries, Inc.

MV68T1CD

14DIP,5.0Volt,HCMOS/TTL,VCXO

MTRONPTI

Mtron Industries, Inc.

MV68T1CD

14DIP,5.0Volt,HCMOS/TTL,VCXO

MTRONPTI

Mtron Industries, Inc.

MV68T1CD-R

14DIP,5.0Volt,HCMOS/TTL,VCXO

MTRONPTI

Mtron Industries, Inc.

MV68T1CD-R

14DIP,5.0Volt,HCMOS/TTL,VCXO

MTRONPTI

Mtron Industries, Inc.

产品属性

  • 产品编号:

    SBCP68T1G

  • 制造商:

    onsemi

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 系列:

    Automotive, AEC-Q101

  • 包装:

    带盒(TB)

  • 晶体管类型:

    NPN

  • 不同 Ib、Ic 时 Vce 饱和压降(最大值):

    500mV @ 100mA,1A

  • 电流 - 集电极截止(最大值):

    10µA(ICBO)

  • 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):

    85 @ 500mA,1V

  • 频率 - 跃迁:

    60MHz

  • 工作温度:

    -65°C ~ 150°C(TJ)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    TO-261-4,TO-261AA

  • 供应商器件封装:

    SOT-223

  • 描述:

    TRANS NPN 20V 1A SOT223

供应商型号品牌批号封装库存备注价格
onsemi(安森美)
23+
SOT-223
1612
原厂订货渠道,支持BOM配单一站式服务
询价
ON/安森美
SOT-223
2000
1628
只做原装正品,现货
询价
onsemi(安森美)
22+
SOT-223
96
QQ询价 绝对原装正品
询价
ON/安森美
23+
SOT-223
25000
只做进口原装假一罚百
询价
ON/安森美
20+
SOT-223
120000
原装正品 可含税交易
询价
ON
23+
SOP
190000
原装正品/实单可议/当天可交 库位
询价
ON/安森美
2021+
SOT223
9000
原装现货,随时欢迎询价
询价
ON/安森美
SOT223
7906200
询价
ON
2017+
SOT-223
45896
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
ON
23+
SOT-223
11846
一级代理商现货批发,原装正品,假一罚十
询价
更多SBCP68T1G供应商 更新时间2024-5-1 23:00:00