Power Schottky Rectifier - 8Amp 40~100Volt

文件：183.72 Kbytes 页数：3 Pages

SIRECT

矽莱克半导体

Power Schottky Rectifier - 8Amp 40~100Volt

文件：183.86 Kbytes 页数：3 Pages

SIRECT

矽莱克半导体

丝印：SB840ESD；Package：DO-201AD；Schottky Barrier Rectifiers Reverse Voltage 20 to 100V Forward Current8.0A

Feature & Dimensions Plastic package has underwriters laboratory Flammability classification 94V-0 Low power loss,high efficiency For use in low voltage high frequency inverters, free wheeling,and polarity protection applications Guarding for over voltage protection High temperature solderi

文件：110.85 Kbytes 页数：5 Pages

LRC

乐山无线电

ISOLATION SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 8 Ampere)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, high current capability • High surg

文件：42.18 Kbytes 页数：2 Pages

PANJIT

強茂

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

DESCRIPTION The µPA840TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain Q

文件：79.35 Kbytes 页数：16 Pages

NEC

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

DESCRIPTION The µPA840TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain Q

文件：79.35 Kbytes 页数：16 Pages

NEC

瑞萨