ESD Leaded Schottky Barrier Rectifiers

Features - Low drop down voltage. - 3.0A operation at TA=75°C with no thermal runaway. - For use in low voltage, high frequency invertors free wheeling and polarity protection. - Silicon epitaxial planar chips. - Lead-free part, meet RoHS requirements. - ESD test under IEC6100-4-2 : Standard

文件：60.41 Kbytes 页数：3 Pages

COMCHIP

典琦

ESD Leaded Schottky Barrier Rectifiers

Features - Low drop down voltage. - 3.0A operation at TA=75°C with no thermal runaway. - For use in low voltage, high frequency invertors free wheeling and polarity protection. - Silicon epitaxial planar chips. - Lead-free part, meet RoHS requirements. - ESD test under IEC6100-4-2 : Standard

文件：60.41 Kbytes 页数：3 Pages

COMCHIP

典琦

SCHOTTKY BARRIER RECTIFIER VOLTAGE: 45V CURRENT: 3.0A

FEATURE High current capability, Low forward voltage drop Low power loss, high efficiency High surge capability High temperature soldering guaranteed 250°C /10sec/0.375 lead length at 5 lbs tension

文件：105.35 Kbytes 页数：2 Pages

GULFSEMI

海湾电子

Leaded Schottky Barrier Rectifiers

Voltage: 20 to 100 V Current: 3.0 A Features - Low drop down voltage. - Metal-Semiconductor junction with guard ring - High surge current capability - Silicon epitaxial planar chips. - For use in low voltage, high efficiency inverters, free wheeling, and polarity protection applications

文件：59.71 Kbytes 页数：3 Pages

COMCHIP

典琦