Leaded Schottky Barrier Rectifiers

Features - Low drop down voltage. - Metal-Semiconductor junction with guard ring - High surge current capability - Silicon epitaxial planar chips. - For use in low voltage, high efficiency inverters, free wheeling, and polarity protection applications - Lead-free part, meet RoHS requirem

文件：59.95 Kbytes 页数：3 Pages

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Leaded Schottky Barrier Rectifiers

Features - Low drop down voltage. - Metal-Semiconductor junction with guard ring - High surge current capability - Silicon epitaxial planar chips. - For use in low voltage, high efficiency inverters, free wheeling, and polarity protection applications - Lead-free part, meet RoHS requirem

文件：59.95 Kbytes 页数：3 Pages

COMCHIP

典琦

ESD Leaded Schottky Barrier Rectifiers

Voltage: 20 to 100 V Current: 2.0 A RoHS Device Features - Low drop down voltage. - For use in low voltage, high frequency invertors free wheeling and polarity protection. - Silicon epitaxial planar chips. - ESD test under IEC6100-4-2 : Standard: >15KV(Air) & 8KV(Contact) Mecha

文件：77.23 Kbytes 页数：3 Pages

COMCHIP

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ESD Leaded Schottky Barrier Rectifiers

Voltage: 20 to 100 V Current: 2.0 A RoHS Device Features - Low drop down voltage. - For use in low voltage, high frequency invertors free wheeling and polarity protection. - Silicon epitaxial planar chips. - ESD test under IEC6100-4-2 : Standard: >15KV(Air) & 8KV(Contact) Mecha

文件：77.23 Kbytes 页数：3 Pages

COMCHIP

典琦