SB220EB-G资料datasheet下载行情报价典琦-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
SB220EB-G	文件：77.23 Kbytes Page：3 Pages	ESD Leaded Schottky Barrier Rectifiers Voltage: 20 to 100 V Current: 2.0 A RoHS Device Features - Low drop down voltage. - For use in low voltage, high frequency invertors free wheeling and polarity protection. - Silicon epitaxial planar chips. - ESD test under IEC6100-4-2 : Standard: >15KV(Air) & 8KV(Contact) Mecha 文件：77.23 Kbytes 页数：3 Pages	COMCHIP 典琦	COMCHIP
SB220E-G	文件：77.23 Kbytes Page：3 Pages	ESD Leaded Schottky Barrier Rectifiers 文件：77.23 Kbytes 页数：3 Pages	COMCHIP 典琦	COMCHIP
SB220E-G	文件：77.23 Kbytes Page：3 Pages	ESD Leaded Schottky Barrier Rectifiers Voltage: 20 to 100 V Current: 2.0 A RoHS Device Features - Low drop down voltage. - For use in low voltage, high frequency invertors free wheeling and polarity protection. - Silicon epitaxial planar chips. - ESD test under IEC6100-4-2 : Standard: >15KV(Air) & 8KV(Contact) Mecha 文件：77.23 Kbytes 页数：3 Pages	COMCHIP 典琦	COMCHIP
SB220ET-G	文件：77.23 Kbytes Page：3 Pages	ESD Leaded Schottky Barrier Rectifiers Voltage: 20 to 100 V Current: 2.0 A RoHS Device Features - Low drop down voltage. - For use in low voltage, high frequency invertors free wheeling and polarity protection. - Silicon epitaxial planar chips. - ESD test under IEC6100-4-2 : Standard: >15KV(Air) & 8KV(Contact) Mecha 文件：77.23 Kbytes 页数：3 Pages	COMCHIP 典琦	COMCHIP

更多SB220EB-G供应商更新时间2021-9-14 10:50:00