Schottky Barrier Diode Wafer 63 Mils, 150 Volt, 3 Amp

Features Oxide Passivated Junction Low Forward Voltage 150 º C Junction Operating Low Reverse Leakage Supplied as Wafers Platinum Barrier

文件：155.53 Kbytes 页数：1 Pages

TEL

Schottky Barrier Diode Wafer 63 Mils, 150 Volt, 3 Amp

Features Oxide Passivated Junction Low Forward Voltage 150 º C Junction Operating Low Reverse Leakage Supplied as Wafers Platinum Barrier

文件：155.53 Kbytes 页数：1 Pages

TEL

Schottky Barrier Diode Wafer 63 Mils, 200 Volt, 3 Amp

Features Oxide Passivated Junction Low Forward Voltage 150 º C Junction Operating Low Reverse Leakage Supplied as Wafers Platinum Barrier

文件：155.49 Kbytes 页数：1 Pages

TEL

Schottky Barrier Diode Wafer 63 Mils, 200 Volt, 3 Amp

Features Oxide Passivated Junction Low Forward Voltage 150 º C Junction Operating Low Reverse Leakage Supplied as Wafers Platinum Barrier

文件：155.49 Kbytes 页数：1 Pages

TEL

Schottky Barrier Diode Wafer 63 Mils, 200 Volt, 3 Amp

Features Oxide Passivated Junction Low Forward Voltage 150 º C Junction Operating Low Reverse Leakage Supplied as Wafers Platinum Barrier

文件：155.49 Kbytes 页数：1 Pages

TEL

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

文件：1.44063 Mbytes 页数：2 Pages

SAMYANG

三阳电子

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

文件：1.44063 Mbytes 页数：2 Pages

SAMYANG

三阳电子

Schottky cr Barrier Diode Wafer 65 Mils, 15 Volt, 2 Amp, 0.32VF.

Features Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier >1000V ESD (MM)

文件：155.95 Kbytes 页数：1 Pages

TEL

Schottky cr Barrier Diode Wafer 65 Mils, 15 Volt, 3 Amp, 0.35VF.

Features Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier >1000V ESD (MM)

文件：155.62 Kbytes 页数：1 Pages

TEL

Schottky cr Barrier Diode Wafer 65 Mils, 25 Volt, 3 Amp, 0.38VF.

Features Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier >1000V ESD (MM)

文件：156.16 Kbytes 页数：1 Pages

TEL