Schottky Barrier Diode

Features • Low forward voltage (VF max=0.55V) • Fast reverse recovery time (trr max=10ns) • Low switching noise • Low leakage current and high reliability due to highly reliable planar structure Applications • High frequency rectifcation (switching regulators, converters, choppers)

文件：720.43 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 50V 100MA 3CP

ONSEMI

安森美半导体

Schottky Barrier Diode

Features • Low forward voltage (VF max=0.55V) • Fast reverse recovery time (trr max=10ns) • Low switching noise • Low leakage current and high reliability due to highly reliable planar structure • Small-sized package, permitting SB01-05Q-applied sets to be compact and slim Applications • Hi

文件：302.21 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

50V, 100mA Rectifier

50V, 100mA Rectifier Features • Low forward voltage (VF max=0.55V). • Fast reverse recorvery time (trr max=10ns). • Low switching noise. • Low leakage current and high reliability due to highly reliable planar structure. • Very small-sized package, permitting SB01-05Q applied sets to be comp

文件：51.17 Kbytes 页数：2 Pages

SANYO

三洋

Schottky Barrier Diode

Features • Low forward voltage (VF max=0.55V) • Fast reverse recovery time (trr max=10ns) • Low switching noise • Low leakage current and high reliability due to highly reliable planar structure • Small-sized package, permitting SB01-05Q-applied sets to be compact and slim Applications • Hi

文件：302.21 Kbytes 页数：5 Pages

ONSEMI

安森美半导体