SAM9N12

The ARM926EJ-S based SAM9CN12 features the frequently requested combination of user...

Description BasedontheARM926EJ-S™processor,theAtmel®SAM9N12/CN11/CN12devicesofferthefrequently-requestedcombinationofuserinterfacefunctionalityandhighdatarateconnectivity,withLCDController,resistivetouch-screen,multipleUARTs,SPI,I2C,full-speedUSBHostandDevicean

SAM9N12_14

One 128-Kbyte internal ROM embedding bootstrap routine

ESD9N12BA

DFN1006-2ESDProtectionDevicesROHS

Descriptions TheESD9N12BAisaTVS(TransientVoltage Suppressor)designedtoprotectsensitiveelectronic componentswhichareconnectedtodataand transmissionlinesfromover-stresscausedbyESD (ElectrostaticDischarge),EFT(ElectricalFastTransients) andlightning. TheESD9N12BAm

ESD9N12BA

TheESD9N12BAisaTVS(TransientVoltageSuppressor)

Features Stand-offvoltage:±12VMax. Transientprotectionforeachlineaccordingto IEC61000-4-2(ESD):±30kV(contactdischarge) IEC61000-4-5(surge):5.5A(8/20μs) Capacitance:CJ=27pFtyp. Ultra-lowleakagecurrent:IR=0.1nAtyp. Lowclampingvoltage:VCL=20Vtyp.@IPP=16A(TL

ESD9N12BA

BIDIRECTIONALTVSDIODE

Features Protectsonedataorpowerline Ultralowleakage:nAlevel Operatingvoltage:12V Lowclampingvoltage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±30kV –IEC61000-4-5(Lightning)8A(8/20μs) RoHSCompliant A

ESD9N12BA

1-Line,Bi-directional,TransientVoltageSuppressors

ESD9N12V

1-Line,Uni-directional,TransientVoltageSuppressor