Dual-band RF front-end

DESCRIPTION The SA1920 is an integrated dual-band RF front-end that operates at both cellular (AMPS, GSM and TDMA) and PCS/DCS (TDMA and GSM) frequencies, and is designed in a 13 GHz fT BiCMOS process—QUBiC1. The low-band is a combined low-noise amplifier (LNA) and mixer. The LNA has a 1.7 dB noi

文件：215.42 Kbytes 页数：36 Pages

PHI

PHI

Dual-band RF front-end

恩XP

2x5 Rectangular LED

文件：24.79 Kbytes 页数：1 Pages

SANKEN

三垦

32-Bit Single-Chip Microcontroller

文件：2.96204 Mbytes 页数：78 Pages

INFINEON

英飞凌

25 GHz Silicon NPN Planar RF Transistor

Features • Very low noise figure • Very high power gain • High transition frequency fT = 24 GHz • Low feedback capacitance • Emitter pins are thermal leads • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC    and WEEE 2002/96/EC Applications    For RF front-ends, lo

文件：55.21 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

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