Plastic-Encapsulate Transistors

FEATURES High Current Gain Bandwidth Product

文件：694.34 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

NPN Plastic-Encapsulate Transistors

FEATURE Power dissipation PCM : 0.4 W (Tamb=25 °C) Collector current ICM: 0.05 A Collector-base voltage V(BR)CBO : 25 V Operating and storage junction temperature range Tj, Tstg: -55°C to +150°C

文件：110.81 Kbytes 页数：1 Pages

SECOS

喜可士

TO-92 Plastic-Encapsulate Transistors

FEATURES High Current Gain Bandwidth Product

文件：1.6915 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

Plastic Encapsulated Transistor

FEATURE • AM/FM Amplifier, Local Oscillator of FM/VHF Tuner • High Current Gain Bandwidth Product fT = 1.1 GHz (Typ)

文件：301.78 Kbytes 页数：2 Pages

SECOS

喜可士