NPN SILICON EPITAXIAL PLANAR TRANSISTOR

Features ● Collector Current.(IC= 25mA） ● Power dissipation.(PC=200mW)

文件：724.43 Kbytes 页数：3 Pages

SUNMATE

森美特

NPN Silicon Epitaxial Planar Transistor

FEATURES ● Collector Current.(IC= 25mA） ● Power dissipation.(PC=200mW) APPLICATIONS ● AM converter, FM/RM amplifier of low noise.

文件：196 Kbytes 页数：3 Pages

BILIN

银河微电

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.3 W (Tamb=25℃) Collector current ICM: 0.025 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：127.13 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

NPN Silicon Epitaxial Planar Transistor

FEATURES ● Collector Current.(IC= 25mA） ● Power dissipation.(PC=200mW) APPLICATIONS ● AM converter, FM/RM amplifier of low noise.

文件：278.46 Kbytes 页数：4 Pages

DSK

TO-92 Plastic-Encapsulate Transistors

文件：32.38 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

NPN Silicon Epitaxial Planar Transistor

文件：169.51 Kbytes 页数：4 Pages

BILIN

银河微电

丝印：Y6；Package：SOT-23；NPN Silicon Epitaxial Planar Transistor

文件：1.58319 Mbytes 页数：3 Pages

LUGUANG

鲁光电子

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 200 mW (Tamb=25℃) Collector current ICM: 0.025 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：36.81 Kbytes 页数：1 Pages

JIANGSU

长电科技

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 200 mW (Tamb=25℃) Collector current ICM: 0.025 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：36.81 Kbytes 页数：1 Pages

JIANGSU

长电科技

NPN Silicon Epitaxial Planar Transistor

文件：169.51 Kbytes 页数：4 Pages

BILIN

银河微电