| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PowerMOSFET FEATURES •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified(SeeAN1001) •Lead(Pb)-freeAvailable APPLICATIONS •Swi | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowe | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowe | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
N-Channel650V(D-S)PowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowe | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
RepetitiveAvalancheRated DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET FEATURES •Surface-mount •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheet | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialappl | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Darl
- 性质：
低频或音频放大 （LF）
- 封装形式：
直插封装
- 极限工作电压：
- 最大电流允许值：
10A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
3
- 可代换的型号：
- 最大耗散功率：
90W
- 放大倍数：
- 图片代号：
B-33
- vtest：
0
- htest：
999900
- atest：
10
- wtest：
90
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CJ |
19+ |
SOT-23 |
20000 |
原装现货假一罚十 |
询价 | ||
CJ |
1942+ |
SOT-23 |
9852 |
只做原装正品现货或订货!假一赔十! |
询价 | ||
CJ |
24+ |
SOT-23 |
63200 |
一级代理/放心采购 |
询价 | ||
CJ/长晶 |
25+ |
SOT-23 |
54648 |
百分百原装现货 实单必成 |
询价 | ||
PHI |
24+ |
DIP14 |
65 |
询价 | |||
PHILIPS/飞利浦 |
23+ |
CDIP-14 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
PHILIPS/飞利浦 |
22+ |
CDIP-14 |
14008 |
原装正品 |
询价 | ||
NKKSwitches |
新 |
49 |
全新原装 货期两周 |
询价 | |||
NKK Switches |
2022+ |
45 |
全新原装 货期两周 |
询价 | |||
NKK |
20+ |
开关元件 |
96 |
就找我吧!--邀您体验愉快问购元件! |
询价 |
