S70KS1282集成电路（IC）的存储器规格书PDF中文资料

特性 Features

Interface

• HyperBus Interface

• 1.8 V / 3.0 V interface support

- Single-ended clock (CK) - 11 bus signals

- Optional differential clock (CK, CK#) - 12 bus signals

• Chip Select (CS#)

• 8-bit data bus (DQ[7:0])

• Hardware reset (RESET#)

• Bidirectional Read-Write Data Strobe (RWDS)

- Output at the start of all transactions to indicate refresh latency

- Output during read transactions as Read Data Strobe

- Input during write transactions as Write Data Mask

• Optional DDR Center-Aligned Read Strobe (DCARS)

- During read transactions RWDS is offset by a second clock, phase shifted from CK

- The Phase Shifted Clock is used to move the RWDS transition edge within the read data eye

Performance, Power, and Packages

• 200 MHz maximum clock rate

• DDR - transfers data on both edges of the clock

• Data throughput up to 400 MBps (3,200 Mbps)

• Configurable Burst Characteristics

- Linear burst

- Wrapped burst lengths:

• 16 bytes (eight clocks)

• 32 bytes (16 clocks)

• 64 bytes (32 clocks)

• 128 bytes (64 clocks)

- Hybrid option - one wrapped burst followed by linear burst on 64 Mb. Linear Burst across die boundary is not

supported.

• Configurable output drive strength

• Power Modes[1]

- Hybrid Sleep Mode

- Deep Power Down

• Array Refresh

- Partial Memory Array (1/8, 1/4, 1/2, and so on)

- Full

• Package

- 24-ball FBGA

• Operating Temperature Range

- Automotive, AEC-Q100 Grade 1: –40 °C to +125 °C

Technology

• 38-nm DRAM