S70KL1282GABHV020集成电路（IC）的存储器规格书PDF中文资料

特性 Features

• Interface

- HYPERBUS™ interface

- 1.8 V / 3.0 V interface support

• Single-ended clock (CK) - 11 bus signals

• Optional differential clock (CK, CK#) - 12 bus signals

- Chip select (CS#)

- 8-bit data bus (DQ[7:0])

- Hardware reset (RESET#)

- Bidirectional read-write data strobe (RWDS)

• Output at the start of all transactions to indicate refresh latency

• Output during read transactions as read data strobe

• Input during write transactions as write data mask

- Optional DDR center-aligned read strobe (DCARS)

• During read transactions RWDS is offset by a second clock, phase shifted from CK

• The phase shifted clock is used to move the RWDS transition edge within the read data eye

• Performance, power, and packages

- 200 MHz maximum clock rate

- DDR - transfers data on both edges of the clock

- Data throughput up to 400 MBps (3,200 Mbps)

- Configurable burst characteristics

• Linear burst

• Wrapped burst lengths:

16 bytes (8 clocks)

32 bytes (16 clocks)

64 bytes (32 clocks)

128 bytes (64 clocks)

• Hybrid option - one wrapped burst followed by linear burst on 64 Mb. Linear burst across die boundary is

not supported.

- Configurable output drive strength

- Power modes[1]

• Hybrid sleep mode

• Deep power down

- Array refresh

• Partial memory array(1/8, 1/4, 1/2, and so on)

• Full memory array

- Package

• 24-ball FBGA

- Operating temperature range

• Industrial (I): –40°C to +85°C

• Industrial plus (V): –40°C to +105°C

• Automotive (A), AEC-Q100 grade 3: –40°C to +85°C

• Automotive (B), AEC-Q100 grade 2: –40°C to +105°C

• Technology

- 38-nm DRAM