S70GL02GS12FHAV1X中文资料英飞凌数据手册PDF规格书

Distinctive characteristics

• CMOS 3.0 V core with Versatile I/O™

• Two 1024 Megabit (S29GL01GS) in a single 64-ball Fortified-BGA package (see S29GL01GS datasheet for full

specifications)

• 65-nm MIRRORBIT™ process technology

• Single supply (VCC) for read / program / erase (2.7 V to 3.6 V)

• Versatile I/O feature

- Wide I/O voltage (VIO): 1.65 V to VCC

• ×16 data bus

• 16-word/32-byte page read buffer

• 512-byte programming buffer

- Programming in page multiples, up to a maximum of 512 bytes

• Sector erase

- Uniform 128-KB sectors

- S70GL02GS: two thousand forty-eight sectors

• Suspend and Resume commands for Program and Erase operations

• Status Register, data polling, and Ready/Busy pin methods to determine device status

• Advanced sector protection (ASP)

- Volatile and non-volatile protection methods for each sector

• Separate 1024-bye one time program (OTP) array with two lockable regions

- Available in each device Support for common flash interface (CFI)

• WP# input

- Protects first or last sector, or first and last sectors of each device, regardless of sector protection settings

• Temperature range:

- Industrial temperature range (–40°C to +85°C)

- Automotive AEC-Q100 grade 3 (–40°C to +85°C)

- Automotive AEC-Q100 grade 2 (–40°C to +105°C)

• 100,000 erase cycles per sector typical

• 20-year data retention typical

• Packaging options

- 64-ball LSH Fortified BGA, 13 mm  11 mm