650V SIC POWER SCHOTTKY RECTIFIER

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage “-A” is an AEC-Q101 qualified device Terminals finish: 100 Pure Tin Pb − Free Device All SMC p

文件：1.41158 Mbytes 页数：8 Pages

SMCDIODE

桑德斯微电子

650V SIC POWER SCHOTTKY RECTIFIER

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage “-A” is an AEC-Q101 qualified device Terminals finish: 100 Pure Tin Pb − Free Device All SMC p

文件：1.41158 Mbytes 页数：8 Pages

SMCDIODE

桑德斯微电子

650-V Direct WBG Diode

Key Features: •SiC performance •Easy paralleling •High current carrying capability •Very low junction capacitance •Highly stable VFand QRRat elevated temperatures

文件：230.18 Kbytes 页数：5 Pages

AnalogPower

6th Generation 650 V, 20 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：1.24597 Mbytes 页数：9 Pages

WOLFSPEED

Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • New 6th Generation Technology • Low Forward Voltage Drop (VF ) • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • Low Leakage Current (Ir ) • Temperature-Independent Switching Behavior • Positive Temperature Coefficient on VF Benefits • Higher System Level Effi

文件：745.71 Kbytes 页数：6 Pages

WOLFSPEED