SiC Schottky Barrier Diode Bare Die

Features 1) Low forward voltage 3) Temperature independent switching behavior 2) Negligible recovery time/current 4) High surge current capability Applications ・Switch Mode Power Supply ・EV Charger ・Uninterruptible Power Supply ・Air Conditioner ・Solar Inverter ・Motor Drive

文件：912.96 Kbytes 页数：7 Pages

ROHM

罗姆

N & P Pair Enhancement Mode MOSFET

文件：263.88 Kbytes 页数：11 Pages

SYNC-POWER

擎力科技

Dual Enhancement Mode Field Effect Transistor ( N and P Channel )

RODUCT SUMMARY (N-Channel) VDSS ID RDS(ON) (mΩ) Max 20 4A 75 @ VGS=2.5V 60 @ VGS=4.5V PRODUCT SUMMARY (P-Channel) VDSS ID RDS(ON) (mΩ) Max -20V -2.5A 190 @ VGS=-2.5V 138 @ VGS=-4.5V

文件：244.83 Kbytes 页数：11 Pages

SAMHOP

三合微科

N- and P-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

文件：613.88 Kbytes 页数：10 Pages

VBSEMI

微碧半导体