Switchmode Schottky Barrier Power Rectifiers

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MOSPEC

统懋

Switchmode Schottky Barrier Power Rectifiers

文件：141.81 Kbytes 页数：2 Pages

MOSPEC

统懋

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

文件：134.9 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：134.26 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技