Schottky Barrier Rectifiers

Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and

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MOSPEC

统懋

SCHOTTKY BARRIER RECTIFIER

FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Metal Silicon junction, majority carrier conduction * Low power loss,high efficiency * High current capability, low forward voltage drop * Guardring for overvoltage protection * For use in low voltage,

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CHENMKO

力勤

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

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VISHAYVishay Siliconix

威世威世科技公司

Dual Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - A

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VISHAYVishay Siliconix

威世威世科技公司