SD103BWS

Marking：S5；Package：SOD-323；SCHOTTKY BARRIER DIODE

FEATURES LowForwardVoltageDrop GuardRingConstructionforTransientProtection NegligibleReverseRecoveryTime LowReverseCapacitance

SD103BWS

Marking：S5；Schottky Barrier Diode

FEATURES •GuardRingConstructionforTransientProtection •NegligibleReverseRecoveryTime •LowCapacitance •LowForwardVoltageDrop

SD103BWS

Marking：S5；Package：SOD-323；Schottky Barrier Diode

FEATURES ●LowForwardVoltageDrop. ●GuardRingConstructionForTransient Protection. ●NegligibleReverseRecoveryTime. ●LowReverseCapacitance. APPLICATIONS ●Schottybarrierswitching.

SD103BWSFL

Marking：S5；Package：SOD-323FL；SCHOTTKY BARRIER DIODE

FEATURES ♦LowForwardVoltageDrop ♦GuardRingConstructionforTransientProtection ♦NegligibleReverseRecoveryTime ♦LowCapacitance ♦LeadfreeincomplywithEURoHS2011/65/EUdirectives MECHANICALDATA ♦Case:SOD-323FL ♦Terminals:SolderableperMIL-STD-750,Method2026 ♦App

SD103BX

Marking：S5；Package：SOD-523；Schottky Barrier Diode

FEATURES •LowForwardVoltageDrop. •GuardRingConstructionForTransientProtection. •NegligibleReverseRecoveryTime. •LowReverseCapacitance. APPLICATIONS •Schottybarrierswitching.

SRD103CWS

Marking：S5；Package：SOD-323；SCHOTTKY BARRIER RECTIFIER

Features ·Smallsurfacemountingtype ·Idealforautomatedplacement ·Ultrafastreverserecoverytime ·Lowpowerlosses,highefficiency ·Lowforwardvoltagedrop ·Highcurrentcapability

SS25

Marking：S5；Package：DO-214AA；SCHOTTKY BARRIER RECTIFIER

FEATURES Highcurrentcapability,lowforwardvoltagedrop Hightemperaturesolderingguaranteed:250oC/101 secondsatterminals Built-instrainrelief Lowpowerloss,higheffciency PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 Lowprofilepackage Forsurfac

SSM3K76CT

Marking：S5；Package：CST3；MOSFETs Silicon N-Channel MOS

Applications •High-SpeedSwitching Features (1)1.5-Vgatedrivevoltage. (2)Lowdrain-sourceon-resistance :RDS(ON)=235mΩ(max)(@VGS=4.5V) RDS(ON)=300mΩ(max)(@VGS=2.5V) RDS(ON)=480mΩ(max)(@VGS=1.8V) RDS(ON)=840mΩ(max)(@VGS=1.5V) (3)Lowleakagecurrent

SSM3K76FS

Marking：S5；Package：SSM；MOSFETs Silicon N-Channel MOS

Applications •High-SpeedSwitching Features (1)1.5-Vgatedrivevoltage. (2)Lowdrain-sourceon-resistance :RDS(ON)=235mΩ(max)(@VGS=4.5V) RDS(ON)=300mΩ(max)(@VGS=2.5V) RDS(ON)=480mΩ(max)(@VGS=1.8V) RDS(ON)=840mΩ(max)(@VGS=1.5V) (3)Lowleakagecurrent

SSM3K76MFV

Marking：S5；Package：VESM；MOSFETs Silicon N-Channel MOS

Applications •High-SpeedSwitching •AnalogSwitches Features (1)1.5Vgatedrivevoltage. (2)Lowdrain-sourceon-resistance RDS(ON)=235mΩ(max)(@VGS=4.5V,ID=800mA) RDS(ON)=300mΩ(max)(@VGS=2.5V,ID=600mA) RDS(ON)=480mΩ(max)(@VGS=1.8V,ID=200mA) RDS(ON)