Diode and Rectifier Devices

125A,100V-1600V rectifier in DO8 package

Microchip

微芯科技

包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：RECTIFIER

MICROCHIP

微芯科技

High Power Infrared Emitter (850 nm)

Features • Point lightsource with high efficiency and small package • die-size (emitting area) 1 x 1 mm2 • max. DC-current 1 A • Low thermal resistance (15 K/W) • Maximum of spectral emission at 850 nm • ESD save up to 2 kV acc. to JESD22-A114-B Applications • Infrared

文件：226.32 Kbytes 页数：8 Pages

OSRAM

艾迈斯欧司朗

1.2mm Discrete HFET

DESCRIPTION The Triquint TGF4230 - EEU is a single gate 1.2 mm Discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high- efficiency power applications up to 1 2- GHz in Class A and Class AB operation. Bond- pad and backside metalization is gold plated for compatibility with

文件：178.77 Kbytes 页数：7 Pages

TRIQUINT

DC - 12 GHz Discrete HFET

Description The TriQuint TGF4230-SCC is a single gate 1.2 mm Discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high-efficiency power applications up to 12 GHz in Class A and Class AB operation. Bond-pad and backside metalization is gold plated for compatibility with e

文件：221.41 Kbytes 页数：9 Pages

TRIQUINT