1200V SIC POWER MOSFET

Positive temperature characteristics, easy to parallel. Low on-resistance Typ. RDS(on) = 175mΩ . Fast switching speed and low switching losses. Very fast and robust intrinsic body diode. Process of non-bright Tin electroplatin

文件：4.56591 Mbytes 页数：10 Pages

SMCDIODE

桑德斯微电子

Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode

Features • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Avalanche Ruggedness • Resistant to Latch-Up • Halogen Free, RoHS Compliant Benefits • Higher System Efficiency • Reduced Cooling Requirements • I

文件：645.99 Kbytes 页数：10 Pages

WOLFSPEED

N-Channel Enhancement Mode

Silicon Carbide Power MOSFET Z-FET™ MOSFET N-Channel Enhancement Mode Features • High Speed Switching with Low Capacitances • High Blocking Voltage with Low RDS(on) • Easy to Parallel and Simple to Drive • Resistant to Latch-Up • Halogen Free, RoHS Compliant Benefts • Higher System

文件：826.16 Kbytes 页数：9 Pages

Cree

科锐

1200V SIC POWER MOSFET

Positive temperature characteristics, easy to parallel. Low on-resistance Typ. RDS(on) = 175mΩ . Fast switching speed and low switching losses. Very fast and robust intrinsic body diode. Process of non-bright Tin electroplatin

文件：5.42097 Mbytes 页数：10 Pages

SMCDIODE

桑德斯微电子