首页>S29WS128N0SBFW111>规格书详情
S29WS128N0SBFW111中文资料飞索数据手册PDF规格书
相关芯片规格书
更多- S29WS128N0SBFW010
- S29WS128N0SBFW110
- S29WS128N0SBFW011
- S29WS128N0SBFI013
- S29WS128N0SBFI010
- S29WS128N0SBFI110
- S29WS128N0SBFW013
- S29WS128N0SBFI011
- S29WS128N0SBFW012
- S29WS128N0SBFI112
- S29WS128N0SBAW113
- S29WS128N0SBFI113
- S29WS128N0SBFI111
- S29WS128N0SBFI012
- S29WS128N0SBFW010
- S29WS128N0SBFW013
- S29WS128N0SBFW110
- S29WS128N0SBFI013
S29WS128N0SBFW111规格书详情
General Description
The Spansion S29WS256/128/064N are MirrorbitTM Flash products fabricated on 110 nm process technology. These burst mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two separate banks using separate data and address pins. These products can operate up to 80 MHz and use a single VCC of 1.7 V to 1.95 V that makes them ideal for today’s demanding wireless applications requiring higher density, better performance and lowered power consumption.
Distinctive Characteristics
■ Single 1.8 V read/program/erase (1.70–1.95 V)
■ 110 nm MirrorBit™ Technology
■ Simultaneous Read/Write operation with zero
latency
■ 32-word Write Buffer
■ Sixteen-bank architecture consisting of 16/8/4
Mwords for WS256N/128N/064N, respectively
■ Four 16 Kword sectors at both top and bottom of
memory array
■ 254/126/62 64 Kword sectors (WS256N/128N/
064N)
■ Programmable burst read modes
— Linear for 32, 16 or 8 words linear read with or
without wrap-around
— Continuous sequential read mode
■ SecSi™ (Secured Silicon) Sector region consisting
of 128 words each for factory and customer
■ 20-year data retention (typical)
■ Cycling Endurance: 100,000 cycles per sector
(typical)
■ RDY output indicates data available to system
■ Command set compatible with JEDEC (42.4)
standard
■ Hardware (WP#) protection of top and bottom
sectors
■ Dual boot sector configuration (top and bottom)
■ Offered Packages
— WS064N: 80-ball FBGA (7 mm x 9 mm)
— WS256N/128N: 84-ball FBGA (8 mm x 11.6 mm)
■ Low VCC write inhibit
■ Persistent and Password methods of Advanced
Sector Protection
■ Write operation status bits indicate program and
erase operation completion
■ Suspend and Resume commands for Program and
Erase operations
■ Unlock Bypass program command to reduce
programming time
■ Synchronous or Asynchronous program operation,
independent of burst control register settings
■ ACC input pin to reduce factory programming time
■ Support for Common Flash Interface (CFI)
■ Industrial Temperature range (contact factory)
产品属性
- 型号:
S29WS128N0SBFW111
- 制造商:
SPANSION
- 制造商全称:
SPANSION
- 功能描述:
256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
24+ |
6000 |
全新原厂原装正品现货,低价出售,实单可谈 |
询价 | ||||
CYPRESS/赛普拉斯 |
24+ |
FBGA/84 |
60000 |
全新原装现货 |
询价 | ||
SPANSION |
1936+ |
FBGA |
6852 |
只做原装正品现货!假一赔十! |
询价 | ||
SPANSION |
2016+ |
BGA |
6600 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
SPANSION |
23+ |
BGA |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
Cypress Semiconductor Corp |
21+ |
64-LBGA |
5280 |
进口原装!长期供应!绝对优势价格(诚信经营 |
询价 | ||
SPANSION |
25+23+ |
BGA |
12698 |
绝对原装正品全新进口深圳现货 |
询价 | ||
SPANSION |
2023+ |
BGA |
6893 |
十五年行业诚信经营,专注全新正品 |
询价 | ||
SPANSION |
22+ |
BGA |
30006 |
原装正品现货 |
询价 | ||
CYPRESS/赛普拉斯 |
24+ |
NA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 |