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S29WS064N	文件：1.09158 Mbytes Page：99 Pages	256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY GeneralDescription TheSpansionS29WS256/128/064NareMirrorbitTMFlashproductsfabricatedon110nmprocesstechnology.TheseburstmodeFlashdevicesarecapableofperformingsimultaneousreadandwriteoperationswithzerolatencyontwoseparatebanksusingseparatedataandaddresspins.	spansionSPANSION 飞索飞索半导体	spansion
S29WS064N0LBAI010	文件：1.09158 Mbytes Page：99 Pages	256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY GeneralDescription TheSpansionS29WS256/128/064NareMirrorbitTMFlashproductsfabricatedon110nmprocesstechnology.TheseburstmodeFlashdevicesarecapableofperformingsimultaneousreadandwriteoperationswithzerolatencyontwoseparatebanksusingseparatedataandaddresspins.	spansionSPANSION 飞索飞索半导体	spansion
S29WS064N0LBAI011	文件：1.09158 Mbytes Page：99 Pages	256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY GeneralDescription TheSpansionS29WS256/128/064NareMirrorbitTMFlashproductsfabricatedon110nmprocesstechnology.TheseburstmodeFlashdevicesarecapableofperformingsimultaneousreadandwriteoperationswithzerolatencyontwoseparatebanksusingseparatedataandaddresspins.	spansionSPANSION 飞索飞索半导体	spansion
S29WS064N0LBAI012	文件：1.09158 Mbytes Page：99 Pages	256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY GeneralDescription TheSpansionS29WS256/128/064NareMirrorbitTMFlashproductsfabricatedon110nmprocesstechnology.TheseburstmodeFlashdevicesarecapableofperformingsimultaneousreadandwriteoperationswithzerolatencyontwoseparatebanksusingseparatedataandaddresspins.	spansionSPANSION 飞索飞索半导体	spansion
S29WS064N0LBAI013	文件：1.09158 Mbytes Page：99 Pages	256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY GeneralDescription TheSpansionS29WS256/128/064NareMirrorbitTMFlashproductsfabricatedon110nmprocesstechnology.TheseburstmodeFlashdevicesarecapableofperformingsimultaneousreadandwriteoperationswithzerolatencyontwoseparatebanksusingseparatedataandaddresspins.	spansionSPANSION 飞索飞索半导体	spansion
S29WS064N0LBAI110	文件：1.09158 Mbytes Page：99 Pages	256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY GeneralDescription TheSpansionS29WS256/128/064NareMirrorbitTMFlashproductsfabricatedon110nmprocesstechnology.TheseburstmodeFlashdevicesarecapableofperformingsimultaneousreadandwriteoperationswithzerolatencyontwoseparatebanksusingseparatedataandaddresspins.	spansionSPANSION 飞索飞索半导体	spansion
S29WS064N0LBAI111	文件：1.09158 Mbytes Page：99 Pages	256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY GeneralDescription TheSpansionS29WS256/128/064NareMirrorbitTMFlashproductsfabricatedon110nmprocesstechnology.TheseburstmodeFlashdevicesarecapableofperformingsimultaneousreadandwriteoperationswithzerolatencyontwoseparatebanksusingseparatedataandaddresspins.	spansionSPANSION 飞索飞索半导体	spansion
S29WS064N0LBAI112	文件：1.09158 Mbytes Page：99 Pages	256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY GeneralDescription TheSpansionS29WS256/128/064NareMirrorbitTMFlashproductsfabricatedon110nmprocesstechnology.TheseburstmodeFlashdevicesarecapableofperformingsimultaneousreadandwriteoperationswithzerolatencyontwoseparatebanksusingseparatedataandaddresspins.	spansionSPANSION 飞索飞索半导体	spansion
S29WS064N0LBAI113	文件：1.09158 Mbytes Page：99 Pages	256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY GeneralDescription TheSpansionS29WS256/128/064NareMirrorbitTMFlashproductsfabricatedon110nmprocesstechnology.TheseburstmodeFlashdevicesarecapableofperformingsimultaneousreadandwriteoperationswithzerolatencyontwoseparatebanksusingseparatedataandaddresspins.	spansionSPANSION 飞索飞索半导体	spansion
S29WS064N0LBAW010	文件：1.09158 Mbytes Page：99 Pages	256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY GeneralDescription TheSpansionS29WS256/128/064NareMirrorbitTMFlashproductsfabricatedon110nmprocesstechnology.TheseburstmodeFlashdevicesarecapableofperformingsimultaneousreadandwriteoperationswithzerolatencyontwoseparatebanksusingseparatedataandaddresspins.	spansionSPANSION 飞索飞索半导体	spansion
S29WS064N0LBAW011	文件：1.09158 Mbytes Page：99 Pages	256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY GeneralDescription TheSpansionS29WS256/128/064NareMirrorbitTMFlashproductsfabricatedon110nmprocesstechnology.TheseburstmodeFlashdevicesarecapableofperformingsimultaneousreadandwriteoperationswithzerolatencyontwoseparatebanksusingseparatedataandaddresspins.	spansionSPANSION 飞索飞索半导体	spansion
S29WS064N0LBAW012	文件：1.09158 Mbytes Page：99 Pages	256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY GeneralDescription TheSpansionS29WS256/128/064NareMirrorbitTMFlashproductsfabricatedon110nmprocesstechnology.TheseburstmodeFlashdevicesarecapableofperformingsimultaneousreadandwriteoperationswithzerolatencyontwoseparatebanksusingseparatedataandaddresspins.	spansionSPANSION 飞索飞索半导体	spansion
S29WS064N0LBAW013	文件：1.09158 Mbytes Page：99 Pages	256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY GeneralDescription TheSpansionS29WS256/128/064NareMirrorbitTMFlashproductsfabricatedon110nmprocesstechnology.TheseburstmodeFlashdevicesarecapableofperformingsimultaneousreadandwriteoperationswithzerolatencyontwoseparatebanksusingseparatedataandaddresspins.	spansionSPANSION 飞索飞索半导体	spansion
S29WS064N0LBAW110	文件：1.09158 Mbytes Page：99 Pages	256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY GeneralDescription TheSpansionS29WS256/128/064NareMirrorbitTMFlashproductsfabricatedon110nmprocesstechnology.TheseburstmodeFlashdevicesarecapableofperformingsimultaneousreadandwriteoperationswithzerolatencyontwoseparatebanksusingseparatedataandaddresspins.	spansionSPANSION 飞索飞索半导体	spansion
S29WS064N0LBAW111	文件：1.09158 Mbytes Page：99 Pages	256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY GeneralDescription TheSpansionS29WS256/128/064NareMirrorbitTMFlashproductsfabricatedon110nmprocesstechnology.TheseburstmodeFlashdevicesarecapableofperformingsimultaneousreadandwriteoperationswithzerolatencyontwoseparatebanksusingseparatedataandaddresspins.	spansionSPANSION 飞索飞索半导体	spansion
S29WS064N0LBAW112	文件：1.09158 Mbytes Page：99 Pages	256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY GeneralDescription TheSpansionS29WS256/128/064NareMirrorbitTMFlashproductsfabricatedon110nmprocesstechnology.TheseburstmodeFlashdevicesarecapableofperformingsimultaneousreadandwriteoperationswithzerolatencyontwoseparatebanksusingseparatedataandaddresspins.	spansionSPANSION 飞索飞索半导体	spansion
S29WS064N0LBAW113	文件：1.09158 Mbytes Page：99 Pages	256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY GeneralDescription TheSpansionS29WS256/128/064NareMirrorbitTMFlashproductsfabricatedon110nmprocesstechnology.TheseburstmodeFlashdevicesarecapableofperformingsimultaneousreadandwriteoperationswithzerolatencyontwoseparatebanksusingseparatedataandaddresspins.	spansionSPANSION 飞索飞索半导体	spansion
S29WS064N0LBFI010	文件：1.09158 Mbytes Page：99 Pages	256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY GeneralDescription TheSpansionS29WS256/128/064NareMirrorbitTMFlashproductsfabricatedon110nmprocesstechnology.TheseburstmodeFlashdevicesarecapableofperformingsimultaneousreadandwriteoperationswithzerolatencyontwoseparatebanksusingseparatedataandaddresspins.	spansionSPANSION 飞索飞索半导体	spansion
S29WS064N0LBFI011	文件：1.09158 Mbytes Page：99 Pages	256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY GeneralDescription TheSpansionS29WS256/128/064NareMirrorbitTMFlashproductsfabricatedon110nmprocesstechnology.TheseburstmodeFlashdevicesarecapableofperformingsimultaneousreadandwriteoperationswithzerolatencyontwoseparatebanksusingseparatedataandaddresspins.	spansionSPANSION 飞索飞索半导体	spansion
S29WS064N0LBFI012	文件：1.09158 Mbytes Page：99 Pages	256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY GeneralDescription TheSpansionS29WS256/128/064NareMirrorbitTMFlashproductsfabricatedon110nmprocesstechnology.TheseburstmodeFlashdevicesarecapableofperformingsimultaneousreadandwriteoperationswithzerolatencyontwoseparatebanksusingseparatedataandaddresspins.	spansionSPANSION 飞索飞索半导体	spansion

12 3 4 5 6 >>>

详细参数

型号：
S29WS064N
制造商：
SPANSION
制造商全称：
SPANSION
功能描述：
256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市斌腾达科技有限公司	S29WS064RABBHI000	Cypress Semiconductor Corp	21+	48-TFBGA	5280	进口原装!长期供应!绝对优势价格(诚信经营	询价
瀚佳科技(深圳)有限公司	S29WS064RABBHI000	Cypress Semiconductor Corp	21+	84-FBGA(11.6x8)	56200	一级代理/放心采购	询价
深圳市科雨电子有限公司	S29WS064RABBHI000	CYPRESS	20+	BGA-84	200	就找我吧!--邀您体验愉快问购元件!	询价
万三科技(深圳)有限公司	S29WS064RABBHI000	赛普拉斯/飞索	22+	NA	500000	万三科技,秉承原装,购芯无忧	询价
深圳市易讯博科技有限公司	S29WS064RABBHI000	Cypress	22+	NA	105	加我QQ或微信咨询更多详细信息,	询价
深圳市瑞卓芯科技有限公司	S29WS064RABBHI000	SPANSION/飞索半导体	22+	FBGA	17500	原装正品	询价
深圳市华鑫创达电子有限公司	S29WS064RABBHI000	SPANSION	22+	FBGA	8000	原装现货,假一赔百,支持实单	询价
深圳市宏捷佳电子科技有限公司	S29WS064RABBHI000	Cypress Semiconductor Corp	24+	84-VFBGA	9350	独立分销商,公司只做原装，诚心经营,免费试样正品保证	询价
深圳市诺美思科技有限公司	S29WS064RABBHI000	Infineon Technologies	23+/24+	84-VFBGA	8600	只供原装进口公司现货+可订货	询价
深圳市昊创电子有限公司	S29WS064RABBHW000	CypressSemiconductorCorp	19+		68000	原装正品价格优势	询价

更多S29WS064N供应商更新时间2024-9-22 13:02:00

详细参数

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