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S29GL512N10FAI010

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

文件:2.63199 Mbytes 页数:100 Pages

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S29GL512N10FAI012

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

文件:2.63199 Mbytes 页数:100 Pages

spansion

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S29GL512N10FAI013

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

文件:2.63199 Mbytes 页数:100 Pages

spansion

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S29GL512N10FAI020

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

文件:2.63199 Mbytes 页数:100 Pages

spansion

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S29GL512N10FAI022

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

文件:2.63199 Mbytes 页数:100 Pages

spansion

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S29GL512N10FAI023

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

文件:2.63199 Mbytes 页数:100 Pages

spansion

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S29GL512N10FAIV10

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

文件:2.63199 Mbytes 页数:100 Pages

spansion

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S29GL512N10FAIV12

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

文件:2.63199 Mbytes 页数:100 Pages

spansion

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S29GL512N10FAIV13

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

文件:2.63199 Mbytes 页数:100 Pages

spansion

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S29GL512N10FAIV20

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

文件:2.63199 Mbytes 页数:100 Pages

spansion

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供应商型号品牌批号封装库存备注价格
Cypress Semiconductor Corp
24+
-
56200
一级代理/放心采购
询价
CYPRESS
25+
IC
180
就找我吧!--邀您体验愉快问购元件!
询价
Cypress
22+
NA
105
加我QQ或微信咨询更多详细信息,
询价
Cypress
22+
9000
原厂渠道,现货配单
询价
CYPRESS(赛普拉斯)
24+
BGA64
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
Cypress
2023+
64FBGA
4043
安罗世纪电子只做原装正品货
询价
24+
N/A
64000
一级代理-主营优势-实惠价格-不悔选择
询价
Cypress Semiconductor Corp
25+
64-LBGA
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
Cypress
25+
电联咨询
7800
公司现货,提供拆样技术支持
询价
SPANSION
18+
BGA
85600
保证进口原装可开17%增值税发票
询价
更多S29GL512N10FAI供应商 更新时间2025-11-3 14:17:00