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S29GL256N90TAIV20规格书详情
512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology
General Description
The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The S29GL256N is a 256 Mbit, organized as 16,777,216 words or 33,554,432 bytes. The S29GL128N is a 128 Mbit, organized as 8,388,608 words or 16,777,216 bytes. The devices have a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The device can be programmed either in the host system or in standard EPROM programmers.
Distinctive Characteristics
Architectural Advantages
■ Single power supply operation
— 3 volt read, erase, and program operations
■ Enhanced VersatileI/O™ control
— All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC
■ Manufactured on 110 nm MirrorBit process technology
■ Secured Silicon Sector region
— 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
— May be programmed and locked at the factory or by the customer
■ Flexible sector architecture
— S29GL512N: Five hundred twelve 64 Kword (128 Kbyte) sectors
— S29GL256N: Two hundred fifty-six 64 Kword (128 Kbyte) sectors
— S29GL128N: One hundred twenty-eight 64 Kword (128 Kbyte) sectors
■ Compatibility with JEDEC standards
— Provides pinout and software compatibility for single-power supply flash, and superior inadvertent write protection
■ 100,000 erase cycles per sector typical
■ 20-year data retention typical
Performance Characteristics
■ High performance
— 90 ns access time (S29GL128N, S29GL256N)
— 100 ns (S29GL512N)
— 8-word/16-byte page read buffer
— 25 ns page read times
— 16-word/32-byte write buffer reduces overall programming time for multiple-word updates
■ Low power consumption (typical values at 3.0 V, 5 MHz)
— 25 mA typical active read current;
— 50 mA typical erase/program current
— 1 µA typical standby mode current
■ Package options
— 56-pin TSOP
— 64-ball Fortified BGA
Software & Hardware Features
■ Software features
— Program Suspend and Resume: read other sectors before programming operation is completed
— Erase Suspend and Resume: read/program other sectors before an erase operation is completed
— Data# polling and toggle bits provide status
— Unlock Bypass Program command reduces overall multiple-word programming time
— CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices
■ Hardware features
— Advanced Sector Protection
— WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) detects program or erase cycle completion
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
CypressSemiconductorCorp |
19+ |
- |
26580 |
存储IC一手货源,极具优势! |
询价 | ||
SPANSION |
TSOP56 |
98900 |
原厂集团化配单-有更多数量-免费送样-原包装正品现货- |
询价 | |||
SPANSION |
22+ |
TSOP |
10000 |
原装正品优势现货供应 |
询价 | ||
Cypress Semiconductor Corp |
21+ |
56-TFSOP(0.724,18.40mm 宽) |
6000 |
正规渠道/品质保证/原装正品现货 |
询价 | ||
Cypress |
22+ |
9000 |
原厂渠道,现货配单 |
询价 | |||
SPANSION |
23+ |
TSSOP56 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
Cypress |
22+ |
NA |
105 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
23+ |
N/A |
65700 |
一级代理放心采购 |
询价 | |||
Cypress Semiconductor Corp |
21+ |
- |
56200 |
一级代理/放心采购 |
询价 | ||
SPANSION |
16+ |
1533 |
询价15919799957 |
询价 |