S29GL128S集成电路（IC）的存储器规格书PDF中文资料

厂商型号	S29GL128S
参数属性	S29GL128S 封装/外壳为64-LBGA；包装为托盘；类别为集成电路（IC）的存储器；产品描述：IC FLASH 128MBIT PARALLEL 64FBGA
功能描述	128 Mb/256 Mb/512 Mb/1 Gb GL-S MIRRORBIT™ flash Parallel, 3.0 V
封装外壳	64-LBGA
文件大小	1.46592 Mbytes
页面数量	122 页
生产厂商	Infineon Technologies AG
企业简称	INFINEON【英飞凌】
中文名称	英飞凌科技股份公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-5-30 11:01:00
人工找货	S29GL128S价格和库存，欢迎联系客服免费人工找货

Distinctive characteristics

• CMOS 3.0 V core with versatile I/O

• 65 nm MIRRORBIT™ Eclipse technology

• Single supply (VCC) for read / program / erase (2.7 V to 3.6 V)

• Versatile I/O feature

- Wide I/O voltage range (VIO): 1.65 V to VCC

• ×16 data bus

• Asynchronous 32-byte page read

• 512-byte programming buffer

- Programming in page multiples, up to a maximum of 512 bytes

• Single word and multiple program on same word options

• Automatic error checking and correction (ECC) – internal hardware ECC with single bit error correction

• Sector erase

- Uniform 128-kbyte sectors

• Suspend and resume commands for program and erase operations

• Status register, data polling, and ready/busy pin methods to determine device status

• Advanced sector protection (ASP)

- Volatile and non-volatile protection methods for each sector

• Separate 1024-byte one time program (OTP) array with two lockable regions

• Common flash interface (CFI) parameter table

• Temperature range / grade

- Industrial (–40°C to +85°C)

- Industrial plus(–40°C to +105°C)

- Automotive, AEC-Q100 grade 3 (–40°C to +85°C)

- Automotive, AEC-Q100 grade 2 (–40°C to +105°C)

• 100,000 program / erase cycles

• 20 years data retention

• Packaging options

- 56-pin TSOP

- 64-ball LAA Fortified BGA, 13 mm × 11 mm

- 64-ball LAE Fortified BGA, 9 mm × 9 mm

- 56-ball VBU Fortified BGA, 9 mm × 7 mm