3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

文件：2.63199 Mbytes 页数：100 Pages

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

文件：2.63199 Mbytes 页数：100 Pages

spansion

飞索

3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit??Process Technology

512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology General Description The S29GL512/256/128N family of devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 5

文件：2.63199 Mbytes 页数：100 Pages

spansion

飞索

Memories for Embedded Systems - Parallel NOR Flash Memory - 32Mb – 2Gb 3.0V High Performance, Parallel Page Mode (GL) Flash Memory -

Infineon

英飞凌

Package：64-LBGA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 存储器 描述：IC FLASH 128MBIT PARALLEL 64FBGA

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司