S29GL01GS10FHI010集成电路（IC）的存储器规格书PDF中文资料

S29GL01GS10FHI010属于集成电路（IC）的存储器。由赛普拉斯半导体公司制造生产的S29GL01GS10FHI010存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

General Description

The Cypress® S29GL01G/512/256/128S are MirrorBit® Eclipse flash products fabricated on 65 nm process technology. These

devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a

Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective

programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that

require higher density, better performance and lower power consumption.