SCTHS250N65G3TAG芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
SCTHS250N65G3AG	文件：301.65 Kbytes Page：12 Pages	丝印：S25N65G3PAG；Package：STPAK；Automotive-grade silicon carbide Power MOSFET 650 V, 6.7 mΩ typ., 207 A in a STPAK package Features • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for increased efficiency Application • Main inverter (electric traction) Description This silicon carbide 文件：301.65 Kbytes 页数：12 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
SCTHS250N65G3TAG	文件：301.65 Kbytes Page：12 Pages	丝印：S25N65G3PAG；Package：STPAK；Automotive-grade silicon carbide Power MOSFET 650 V, 6.7 mΩ typ., 207 A in a STPAK package Features • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for increased efficiency Application • Main inverter (electric traction) Description This silicon carbide 文件：301.65 Kbytes 页数：12 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

更多S25N65G3PAG供应商更新时间2025-9-20 14:01:00