S25FL128K中文资料飞索数据手册PDF规格书

Architectural Advantages

 Single power supply operation

– Full voltage range: 2.7 to 3.6V read and write operations

 Memory architecture

– Uniform 4 kB sectors

– 256-byte page size

 Program

– Page Program (up to 256 bytes) in 0.7 ms (typical)

– Program operations are on a page by page basis

– Quad Page Programming

 Erase

– Bulk erase function

– Uniform sector erase (4 kB)

– Uniform block erase (32 kB and 64 kB)

– Erase/Program Suspend and Resume

 Cycling endurance

– 100,000 erase/program cycles typical

 Data retention

– 20-year data retention typical

 Process technology

– Manufactured on 0.09 µm process technology

 Package option

– Industry Standard Pinouts

– 16-pin SO package (300 mils)

Performance Characteristics

 Speed

– Normal READ (Serial): 33 MHz clock rate

– FAST_READ (Serial): 104 MHz clock rate (maximum)

– 104/70 MHz DUAL Output/Quad SPI clocks

– 208/280 MHz equivalent Dual/Quad SPI

– 35 MB/s continuous data transfer rate

 Low Power Consumption

– 4 mA active current, 1.5 µA in Deep Power-down mode (typical)

– Industrial temperature range (–40°C to +85°C)

 Efficient “Continuous Read Mode”

– Low Instruction overhead

– Continuous Read with 8/16/32/64-Byte Wrap

– As few as 8 clocks to address memory

– Allows true XIP (execute in place) operation

Memory Protection Features

 Advanced security features

– Software and Hardware Write-Protect

– Top/Bottom, 4 kB complement array protection

– Power Supply Lock-Down and OTP protection

– 64-Bit Unique ID for each device

– Discoverable Parameters (SFDP) Registers

– 3x 256-Byte Security Registers with OTP locks

– Volatile & Non-volatile Status Register Bits