首页 >S2066A/TD>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
176.00MHzSAWFilter 176.00MHzSAWFilter •ExcellentSize-to-PerformanceRatio •Hermetic13.3x6.5mmSurface-mountCase •ComplieswithDirective2002/95/EC(RoHS) | rfm RF Monolithics, Inc | rfm | ||
500MHz-2200MHz6-BitVariableGainAmp | SIRENZA SIRENZA MICRODEVICES | SIRENZA | ||
500MHz-2200MHz6-BitVariableGainAmp | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
500MHz-2200MHz6-BitVariableGainAmp | SIRENZA SIRENZA MICRODEVICES | SIRENZA | ||
500MHz-2200MHz6-BitVariableGainAmp | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
2.4GHzto2.7GHz2WPOWERAMPLIFIER ProductDescription RFMD’sSZM-2066ZisahighlinearityclassABHeterojunctionBipolarTransistor(HBT)amplifierhousedinalow-costsurface-mountableplasticQ-FlexNmulti-chipmodulepackage.ThisHBTamplifierismadewithInGaPonGaAsdevicetechnologyandfabricatedwithMOCVDforanid | RFMDRF Micro Devices 威讯联合威讯联合半导体(德州)有限公司 | RFMD | ||
2.4-2.7GHz2WPowerAmplifier ProductDescription SirenzaMicrodevices’SZM-2066ZisahighlinearityclassABHeterojunctionBipolarTransistor(HBT)amplifierhousedinalow-costsurface-mountableplasticQ-FlexNmulti-chipmodulepackage.ThisHBTamplifierismadewithInGaPonGaAsdevicetechnologyandfabricatedwith | SIRENZA SIRENZA MICRODEVICES | SIRENZA | ||
2.4GHzto2.7GHz2WPOWERAMPLIFIER ProductDescription RFMD’sSZM-2066ZisahighlinearityclassABHeterojunctionBipolarTransistor(HBT)amplifierhousedinalow-costsurface-mountableplasticQ-FlexNmulti-chipmodulepackage.ThisHBTamplifierismadewithInGaPonGaAsdevicetechnologyandfabricatedwithMOCVDforanid | RFMDRF Micro Devices 威讯联合威讯联合半导体(德州)有限公司 | RFMD | ||
2.4GHzto2.7GHz2WPOWERAMPLIFIER ProductDescription RFMD’sSZM-2066ZisahighlinearityclassABHeterojunctionBipolarTransistor(HBT)amplifierhousedinalow-costsurface-mountableplasticQ-FlexNmulti-chipmodulepackage.ThisHBTamplifierismadewithInGaPonGaAsdevicetechnologyandfabricatedwithMOCVDforanid | RFMDRF Micro Devices 威讯联合威讯联合半导体(德州)有限公司 | RFMD | ||
2.4GHzto2.7GHz2WPOWERAMPLIFIER ProductDescription RFMD’sSZM-2066ZisahighlinearityclassABHeterojunctionBipolarTransistor(HBT)amplifierhousedinalow-costsurface-mountableplasticQ-FlexNmulti-chipmodulepackage.ThisHBTamplifierismadewithInGaPonGaAsdevicetechnologyandfabricatedwithMOCVDforanid | RFMDRF Micro Devices 威讯联合威讯联合半导体(德州)有限公司 | RFMD |
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