300A Threaded Stud Type Screw Silicon Rectifier Diodes for Excitation

Features ※ ThinkiSemi matured process rectifier diodes ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Brushless Exc

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THINKISEMI

思祁半导体

2150 MHz 1 Watt Power Amplifier with Active Bias

Product Description Stanford Microdevices’ SPA-1318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable an

文件：227.92 Kbytes 页数：6 Pages

STANFORD

2150 MHz 1 Watt Power Amplifier with Active Bias

Product Description Sirenza Microdevices’ SPA-1318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and

文件：88.33 Kbytes 页数：5 Pages

SIRENZA

NPN RF POWER TRANSISTOR

文件：22.95 Kbytes 页数：1 Pages

ASI